A novel CMOS 1-bit 8T full adder cell

  • Authors:
  • Tripti Sharma;K. G. Sharma;B. P. Singh;Neha Arora

  • Affiliations:
  • Electronics & Communication Deptt., FET-MITS, Rajasthan, India;Electronics & Communication Deptt., FET-MITS, Rajasthan, India;Electronics & Communication Deptt., FET-MITS, Rajasthan, India;Electronics & Communication Deptt., FET-MITS, Rajasthan, India

  • Venue:
  • WSEAS TRANSACTIONS on SYSTEMS
  • Year:
  • 2010

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Abstract

The 1-bit full adder is a very important component in the design of application specific integrated circuits. Demands for the low power VLSI have been pushing the development of design methodologies aggressively to reduce the power consumption drastically. In most of the digital systems adder lies in the critical path that affects the overall speed of the system. So enhancing the performance of the 1-bit full adder cell is the main design aspect. The present study proposes a novel CMOS 1-bit full adder cell with least MOS transistor count that reduces the serious problem of threshold loss. It considerably increases the speed and also proves best for high frequency applications. Result shows 45% improvement in threshold loss problem and considerable reduction in power consumption over the other types of adders with comparable performance. The simulation has been carried out on Tanner EDA tool on BSIM3v3 90nm and 130nm technologies.