Communications of the ACM
Performance of iterative computation in self-timed rings
Journal of VLSI Signal Processing Systems - Special issue: asynchronous circuit design for VLSI signal processing
Scaling of stack effect and its application for leakage reduction
ISLPED '01 Proceedings of the 2001 international symposium on Low power electronics and design
IEEE Transactions on Very Large Scale Integration (VLSI) Systems - Special section on system-level interconnect prediction (SLIP)
Low power synthesis of dynamic logic circuits using fine-grained clock gating
Proceedings of the conference on Design, automation and test in Europe: Proceedings
Asynchronous Computing in Sense Amplifier-Based Pass Transistor Logic
ASYNC '08 Proceedings of the 2008 14th IEEE International Symposium on Asynchronous Circuits and Systems
Principles of Asynchronous Circuit Design: A Systems Perspective
Principles of Asynchronous Circuit Design: A Systems Perspective
DCG: deterministic clock-gating for low-power microprocessor design
IEEE Transactions on Very Large Scale Integration (VLSI) Systems - Special section on the 2002 international symposium on low-power electronics and design (ISLPED)
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This paper presents the design and implementation of a low-energy asynchronous logic topology using sense amplifier-based pass transistor logic (SAPTL). The SAPTL structure can realize very low energy computation by using low-leakage pass transistor networks at low supply voltages. The introduction of asynchronous operation in SAPTL further improves energy-delay performance without a significant increase in hardware complexity. We show two different self-timed approaches: 1) the bundled data and 2) the dual-rail handshaking protocol. The proposed self-timed SAPTL architectures provide robust and efficient asynchronous computation using a glitch-free protocol to avoid possible dynamic timing hazards. Simulation and measurement results show that the self-timed SAPTL with dual-rail protocol exhibits energy-delay characteristics better than synchronous and bundled data self-timed approaches in 90-nm CMOS.