The case for a single-chip multiprocessor
Proceedings of the seventh international conference on Architectural support for programming languages and operating systems
Variability in sub-100nm SRAM designs
Proceedings of the 2004 IEEE/ACM International conference on Computer-aided design
Design Margin Exploration of Spin-Torque Transfer RAM (SPRAM)
ISQED '08 Proceedings of the 9th international symposium on Quality Electronic Design
A nondestructive self-reference scheme for spin-transfer torque random access memory (STT-RAM)
Proceedings of the Conference on Design, Automation and Test in Europe
An overview of non-volatile memory technology and the implication for tools and architectures
Proceedings of the Conference on Design, Automation and Test in Europe
Universal statistical cure for predicting memory loss
Proceedings of the International Conference on Computer-Aided Design
Process variation aware data management for STT-RAM cache design
Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design
Multi-level cell STT-RAM: is it realistic or just a dream?
Proceedings of the International Conference on Computer-Aided Design
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Spin-Transfer Torque Random Access Memory (STT-RAM) demonstrated great potentials as an universal memory for its fast access speed, zero standby power, excellent scalability and simplicity of cell structure. However, large process variations of both magnetic tunneling junction and CMOS process severely limit the yield of STT-RAM chips and prevent the massive production from happening. In this paper, we analyze the impacts of process variations on various sensing schemes of STT-RAM. Based on our analysis, we propose a novel voltage-driven non-destructive self-reference sensing scheme (VDRS) to enhance the STT-RAM chip yield by significantly improving sense margin. Monte-Carlo simulations of a 16Kb STT-RAM array shows that VDRS can achieve the same yield as the previous non-destructive self-reference sensing scheme while improving the sense margin by 5.16 times with the similar access performance and power.