The evolution of IBM CMOS DRAM technology

Authors:
E. Adler;J. K. DeBrosse;S. F. Geissler;S. J. Holmes;M. D. Jaffe;J. B. Johnson;C. W. Koburger, III;J. B. Lasky;B. Lloyd;G. L. Miles;J. S. Nakos;W. P. Noble, Jr.;S. H. Voldman;M. Armacost;R. Ferguson
Affiliations:
IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Essex Junction, VT;IBM Microelectronics Div., Hopewell Junction, NY;IBM Microelectronics Div., Hopewell Junction, NY
Venue:
IBM Journal of Research and Development - Special issue: IBM CMOS technology
Year:
1995

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