Impact of NBTI on SRAM Read Stability and Design for Reliability
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Modeling and minimization of PMOS NBTI effect for robust nanometer design
Proceedings of the 43rd annual Design Automation Conference
An analytical model for negative bias temperature instability
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design
Random variability modeling and its impact on scaled CMOS circuits
Journal of Computational Electronics
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In the contemporary and future MOSFETs, NBTI/PBTI-related charge trapping in the presence of underlying statistical variability gives rise to statistical degradation of the coresponding electrical characteristics and figures of merit. We present a framework that integrates the statistical aspect of the NBTI/PBTI degradation, obtained from large-scale 3D 'atomistic' device simulations, into statistical compact models. Through a selection of physically relevant compact model parameters, the resulting library of compact models provides high accuracy in representing the statistical NBTI/PBTI degradation effects, across a wide range of degradation conditions. This approach enables circuit designers to verify to what extent particular design solutions will meet the design specifications subject to progressive BTI degradation in the presence of statistical variability.