The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits

Authors:
M. Eisele;J. Berthold;D. Schmitt-Landsiedel;R. Mahnkopf
Affiliations:
Technical University of Munich, Inst. of Elect. Design Automation 80290 Munich, Germany and Siemens A.G., Corporate R&D, 81730 Munich, Germany;Siemens A.G., Corporate R&D, 81730 Munich, Germany;Siemens A.G., Corporate R&D, 81730 Munich, Germany;Siemens A.G., Semiconductor Division, 81730 Munich, Germany
Venue:
ISLPED '96 Proceedings of the 1996 international symposium on Low power electronics and design
Year:
1996

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Abstract