Behavioral Model of Analog Circuits for Nonvolatile Memories with VHDL-AMS

  • Authors:
  • Ivan Boccuni;Rosario Gulino;Gaetano Palumbo

  • Affiliations:
  • ST-Microelectronics, MPG Group, Stradale Primosole 50, I-95121 Catania-Italy Tel.: +39-095-7382313, Fax: +39-095-330-793;Dipartimento Elettrico Elettronico e Sistemistico (DEES), Universita' Di Catania, Viale Andrea Doria, 6, I-95125 Catania-Italy Tel.: ++39-095-7382313, Fax: ++39- ...;Dipartimento Elettrico Elettronico e Sistemistico (DEES), Universita' Di Catania, Viale Andrea Doria, 6, I-95125 Catania-Italy Tel.: ++39-095-7382313, Fax: ++39- ...

  • Venue:
  • Analog Integrated Circuits and Signal Processing
  • Year:
  • 2002

Quantified Score

Hi-index 0.01

Visualization

Abstract

In this paper, behavioral models of sense amplifiers and charge pumps, analog circuits extensively used in the design of nonvolatile memories, are developed and discussed in detail. The language used to implement the models is VHDL-AMS. The models not only have the advantage of being used to simulate complex digital systems such as nonvolatile memories, but also allow a huge reduction in the simulation time maintaining good agreement with transistor level simulations.A single and a differential sense amplifier together with three charge pump models are developed.