High volume microprocessor test escapes, an analysis of defects our tests are missing
ITC '98 Proceedings of the 1998 IEEE International Test Conference
Scan test planning for power reduction
Proceedings of the 44th annual Design Automation Conference
Scan chain clustering for test power reduction
Proceedings of the 45th annual Design Automation Conference
Fault Modeling and Analysis for Resistive Bridging Defects in a Synchronizer
Journal of Electronic Testing: Theory and Applications
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Transistor oxides rupture, metals open or form bridging defects, and integrated circuit parameters can lie outside of normal product distribution. While test and reliability engineers and physicists share these failure modes and have other mutual interests, they often remain isolated from each other. This two-part series from the view of a test engineer explains the major IC reliability failure mechanisms with perspectives on their severity and relation to test. *Part II will appear in the October-December 1999 issue.