Inverter minimization in multi-level logic networks
ICCAD '93 Proceedings of the 1993 IEEE/ACM international conference on Computer-aided design
Design and optimization of dual-threshold circuits for low-voltage low-power applications
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Low power synthesis of dual threshold voltage CMOS VLSI circuits
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Monotonic static CMOS and dual-VT technology
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Technology and design challenges for low power and high performance
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Characterization of monotonic static CMOS gates in a 65nm technology
GLSVLSI '05 Proceedings of the 15th ACM Great Lakes symposium on VLSI
A Low-Leakage High-Speed Monotonic Static CMOS 64b Adder in a Dual Gate Oxide 65-nm CMOS Technology
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Monotonic static CMOS tradeoffs in sub-100nm technologies
GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
Digital Circuit Optimization via Geometric Programming
Operations Research
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In this paper, we describe skewed static logic (S2L) with topology-dependent dual Vt which exhibits an energy-efficient operation. S2L consumes less dynamic and static power compared to monotonic static (MS) CMOS. Speed degradation of S2L, if any, can be offset by an accelerator circuit. We have designed NAND-NOR gate chains using 0.18-µm CMOS technology and verified that S2L reduces energy-delay product over MS CMOS by 27%-50%. We have also designed 32-b carry-lookahead adders and verified that S2L with dual Vt reduces delay by 43% and energy-delay productby 31% for 1-V power supply over conventional CMOS circuit. Synthesis algorithm for S2L is developed and the experimental results show S2L consumes 23% less power than MS CMOS with minor increase in delay.