Ultra Low-Leakage Power Strategies for Sub-1 V VLSI: Novel Circuit Styles and Design Methodologies for Partially Depleted Silicon-On-Insulator (PD-SOI) CMOS Technology

  • Authors:
  • Koushik K. Das;Richard B. Brown

  • Affiliations:
  • -;-

  • Venue:
  • VLSID '03 Proceedings of the 16th International Conference on VLSI Design
  • Year:
  • 2003

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Abstract

As supply voltage is scaled to below 1 V, leakage powerbecomes significant in CMOS ICs. This paper proposesnovel circuit techniques in PD-SOI technology to reducestandby power in the sub-1 V regime by over three ordersof magnitude while maintaining circuit speed and withminimal overhead. Simulation results obtained usingprocess parameters from an IBM 0.13 m PD-SOItechnology show considerable improvement overpreviously proposed methods as supply voltage is scaledto 0.5 V. A new design algorithm for efficientimplementation of these PD-SOI standby power reductionschemes is also described.