Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50nm Double-Gate MOSFET

Authors:
Saibal Mukhopadhyay;Hamid Mahmoodi;Kaushik Roy
Affiliations:
Purdue University, West Lafayette, IN;Purdue University, West Lafayette, IN;Purdue University, West Lafayette, IN
Venue:
ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
Year:
2005

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Abstract

Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively used to improve performance and reduce power in sub-50nm circuits. In this paper, we propose a high-performance sense-amplifier design using independent gate control in symmetric and asymmetric DG devices. The proposed design reduces the sensing delay of the sense amplifier by 30-35% and dynamic power by 10% (at 6GHz) from the connected gate design.