Analysis of Process Variation's Effect on SRAM's Read Stability

Authors:
Chung-Kuan Tsai;Malgorzata Marek-Sadowska
Affiliations:
University of California, Santa Barbara;University of California, Santa Barbara
Venue:
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Year:
2006

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Abstract

In this paper we analyze the effect of manufacturing process variations on the SRAM stability in the read operation. We analyze the SRAM's read operation and the DC voltage-transfer characteristics (VTCs). Based on the VTCs, we define the read margin to characterize the SRAM cell's read stability. We calculate the read margin based on the transistor's current model using the BSIM3v3 model. Experimental results show that the read margin accurately captures the SRAM's read stability as a function of the transistor's threshold voltage and the power supply voltage variations.