DFM issues for 65nm and beyond

  • Authors:
  • Jamil Kawa;Charles Chiang

  • Affiliations:
  • Synopsys, Mountain View, CA;Synopsys, Mountain View, CA

  • Venue:
  • Proceedings of the 17th ACM Great Lakes symposium on VLSI
  • Year:
  • 2007

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Abstract

The 90nm technology node is a mature process and is currently in full production. It was the first node to challenge the limitations of 193 nm lithography in a significant way. Many creative solutions were devised to circumvent those limitations and a lot was learned in the process. Now 65nm, 45nm, and 32nm are pushing the envelope of every aspect of the design and manufacturing flow; not just lithography but also in device engineering, device modeling, and design methodology. Design for Manufacturability (DFM) and Design for Yield (DFY) dictate that we optimize every step in the design flow. Here we address a plurality of those challenges.