Statistical leakage estimation of double gate FinFET devices considering the width quantization property

Authors:
Jie Gu;John Keane;Sachin Sapatnekar;Chris H. Kim
Affiliations:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN;Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN;Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN;Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN
Venue:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Year:
2008

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Abstract

This paper presents a statistical leakage estimation method for FinFET devices considering the unique width quantization property. Monte Carlo simulations show that the conventional approach underestimates the average leakage current of FinFET devices by as much as 43% while the proposed approach gives a precise estimation with an error less than 5%. Design example on subthreshold circuits shows the effectiveness of the proposed method.