Analysis and optimization of leakage current characteristics in sub-65nm dual Vt footed domino circuits

Authors:
Na Gong;Baozeng Guo;Jianzhong Lou;Jinhui Wang
Affiliations:
College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China;College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China;College of Electronic and Informational Engineering, Hebei University, Baoding 071002, China;VLSI & System Laboratory, Beijing University of Technology, Beijing 100022, China
Venue:
Microelectronics Journal
Year:
2008

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Abstract

The inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-65nm dual V"t footed domino circuits. Simulations based on 65 and 45nm BSIM4 models show that the conventional CHIL state (the clock signal is high and inputs are all low) is ineffective for lowering the leakage current and the conventional CHIH state (the clock signal and inputs are all high) is only effective to suppress the leakage current at high temperature other than the high fan-in domino circuits. For the high fan-in footed domino circuits at high temperature and most of footed domino circuits at room temperature, the CLIL (the clock signal and inputs are all low) state is preferable to reduce the leakage current. Further, the influence of the process variations on the leakage current characteristics of the dual V"t footed domino circuits is also evaluated. It is observed that the average leakage current is universally higher than the date reported in the normal corner and the CLIL state is the optimum choice considering the leakage current reduction and the robustness to the process variations simultaneously.