Fully coupled dynamic electro-thermal simulation
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Electro-thermal and logi-thermal simulation of VLSI designs
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Proceedings of the 2001 IEEE/ACM international conference on Computer-aided design
Design and CAD Challenges in sub-90nm CMOS Technologies
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
A Fast Algorithm for the Layout Based Electro-Thermal Simulation
DATE '03 Proceedings of the conference on Design, Automation and Test in Europe - Volume 1
Proceedings of the 2005 Asia and South Pacific Design Automation Conference
METS: A Metric for Electro-Thermal Sensitivity, and Its Application To FinFETs
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
iTEM: a temperature-dependent electromigration reliability diagnosis tool
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
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As device dimensions shrink into the nanometer range, power and performance constraints prohibit the longevity of traditional MOS devices in circuit design. FinFETs, a quasl-planar double-gated device, has emerged as a replacement. While finFETs provide promising electrostatic characteristics, they have the potential to suffer from significant self heating. We study in this paper self heating in multi-fin devices. We first develop thermal models for an individual fin with flared channel extensions and for multi-fin devices. We analyze several fin geometric parameters (fin width, and (gate) length) and investigate how fin spacing, fin height, gate oxide thickness and gate height affect the maximum fin temperatures in rectangular and flared channel extensions. Our data derived from numerical simulation validates our findings. We develop a novel metric, metric for electro-thermal sensitivity (METS), for measuring device thermal robustness. We use the metric to investigate electro-thermal device sensitivities. The metric, while applied to finFETs in this paper, is general and can be applied to any type of device for which coupled electrical and thermal models exist. Our work is the first to address thermal issues within multi-fin devices and to develop a widely-applicable electro-thermal metric.