Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI

Authors:
Soodeh Aghli Moghaddam;Nasser Masoumi
Affiliations:
VLSI Research Group, School of ECE, College of Engineering, University of Tehran, Tehran, Iran;VLSI Research Group, School of ECE, College of Engineering, University of Tehran, Tehran, Iran
Venue:
Microelectronics Journal
Year:
2008

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Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI

Microelectronics Journal

Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI

Microelectronics Journal

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Abstract

Crosstalk noise and delay uncertainty are two major problems in modern very large scale integration (VLSI) design. To overcome these difficulties, a new dielectric structure is proposed for integrated circuits, which is in contrast to the conventional Cu/low-K technology. Both structures are simulated employing a field solver and a time domain simulator. Using the new dielectric structure, near- and far-end crosstalk noises are reduced 45.2% and 15% in the test dimensions, respectively. The proposed structure, called gradually low-K, exhibits negligible side-effects in terms of delay and power consumption. Therefore, it is shown that the gradually low-K structure is a relevant choice to overcome the crosstalk and delay uncertainty problems, especially in the global interconnects tier.