Nanopower subthreshold MCML in submicrometer CMOS technology

Authors:
Francesco Cannillo;Christofer Toumazou;Tor Sverre Lande
Affiliations:
IMEC vzw, Leuven, Belgium and Department of Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, London, UK;Institute of Biomedical Engineering and the Department of Electrical and Electronic Engineering, Imperial College of Science, Technology and Medicine, London, UK and Toumaz Technology Ltd., Abingd ...;Department of Informatics, University of Oslo, Oslo, Norway
Venue:
IEEE Transactions on Circuits and Systems Part I: Regular Papers - Special section on 2008 custom integrated circuits conference (CICC 2008)
Year:
2009

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Abstract

This paper presents subthreshold MOS current-mode logic (MCML) circuits implemented in a commercial 0.25-µm CMOS technology. We propose the adoption of bulk-drain-connected pMOS transistors as loads for subthreshold MCML gates. The b-d connection extends the linear operating range of the load, thus increasing the output logic swing of the subthreshold MCML gate. Theoretical and measured results are presented for an MCML inverter and a ten-stage ring oscillator operating at supply voltages below the threshold-voltage value, with power consumption on the order of nanowatts. At a 300-mV supply, the oscillator works at a frequency of 638 Hz with a total power consumption of 345 pW.