Performance study of VeSFET-based, high-density regular circuits

  • Authors:
  • Yi-Wei Lin;Malgorzata Marek-Sadowska;Wojciech Maly

  • Affiliations:
  • University of California, Santa Barbara, Santa Barbara, CA, USA;University of California, Santa Barbara, Santa Barbara, CA, USA;Carnegie Mellon University, Pittsburgh, PA, USA

  • Venue:
  • Proceedings of the 19th international symposium on Physical design
  • Year:
  • 2010

Quantified Score

Hi-index 0.00

Visualization

Abstract

In this paper, we study circuits implemented using high-density arrays composed of Vertical Slit Field Effect Transistors. This layout style could dramatically increase transistor density and therefore reduce fabrication cost. However, its geometrical restrictions, imposed by the super-regular transistor arrangement and strictly parallel metal tracks pose new design challenges. Our experiments reveal that very dense cell-level interconnect pattern may be responsible for unnecessary 15% increase of the circuit-level, critical path delays. We demonstrate that these extra delays can be avoided by constructing appropriate cell interconnect layouts and by more flexible usage of available metal layers for intra-cell routing. To balance the performance and metal layer usage, we propose a linear programming-based technique for critical net re-routing.