Voltage and temperature aware statistical leakage analysis framework using artificial neural networks

  • Authors:
  • V. Janakiraman;Amrutur Bharadwaj;V. Visvanathan

  • Affiliations:
  • Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, India;Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, India;Texas Instruments, Bangalore, India

  • Venue:
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Year:
  • 2010

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Abstract

Artificial neural networks (ANNs) have shown great promise in modeling circuit parameters for computer aided design applications. Leakage currents, which depend on process parameters, supply voltage and temperature can be modeled accurately with ANNs. However, the complex nature of the ANN model, with the standard sigmoidal activation functions, does not allow analytical expressions for its mean and variance. We propose the use of a new activation function that allows us to derive an analytical expression for the mean and a semi-analytical expression for the variance of the ANN-based leakage model. To the best of our knowledge this is the first result in this direction. Our neural network model also includes the voltage and temperature as input parameters, thereby enabling voltage and temperature aware statistical leakage analysis (SLA). All existing SLA frameworks are closely tied to the exponential polynomial leakage model and hence fail to work with sophisticated ANN models. In this paper, we also set up an SLA framework that can efficiently work with these ANN models. Results show that the cumulative distribution function of leakage current of ISCAS'85 circuits can be predicted accurately with the error in mean and standard deviation, compared to Monte Carlo-based simulations, being less than 1 % and 2 % respectively across a range of voltage and temperature values.