Efficient and accurate method for intra-gate defect diagnoses in nanometer technology and volume data

  • Authors:
  • Aymen Ladhar;Mohamed Masmoudi;Laroussi Bouzaida

  • Affiliations:
  • STMicroelectronics and Micro-technology and Communication Research Group, Tunisia;Micro-technology and Communication Research Group, Tunisia;STMicroelectronics

  • Venue:
  • Proceedings of the Conference on Design, Automation and Test in Europe
  • Year:
  • 2009

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Abstract

Improving diagnosis resolution becomes very important in nanometer technology. Nowadays, defects are affecting gate and transistor level. In this paper, we present a new method to volume diagnosis intra-gate defects affecting standard cell Integrated Circuits (ICs). Our method can identify the cause of failure of different intra-gate defects such as bridge, open and resistive-open defects. Our method gives accurate results since it is based on the use of physical information extracted from library cells layout. Our method can also locate intra-gate defects in presence of multiple faults. Experimental results show the efficiency of our approach to isolate injected defects on industrial designs.