Application exploration for 3-d integrated circuits: TCAM, FIFO, and FFT case studies

Authors:
W. Rhett Davis;Eun Chu Oh;Ambarish M. Sule;Paul D. Franzon
Affiliations:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC;Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC;Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC;Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC
Venue:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Year:
2009

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Abstract

3-D stacking and integration can provide system advantages. This paper explores application drivers and computer-aided design (CAD) for 3-D integrated circuits (ICs). Interconnect-rich applications especially benefit, sometimes up to the equivalent of two technology nodes. This paper presents physical-design case studies of ternary content-addressable memories (TCAMs), first-in first-out (FIFO) memories, and a 8192-point fast Fourier transform (FFT) processor in order to quantify the benefit of the through-silicon vias in an available 180-nm 3-D process. The TCAM shows a 23% power reduction and the FFT shows a 22% reduction in cycle-time, coupled with an 18% reduction in energy per transform.