Timing, energy, and thermal performance of three-dimensional integrated circuits

  • Authors:
  • Shamik Das;Anantha Chandrakasan;Rafael Reif

  • Affiliations:
  • Massachusetts Institute of Technology, Cambridge, MA;Massachusetts Institute of Technology, Cambridge, MA;Massachusetts Institute of Technology, Cambridge, MA

  • Venue:
  • Proceedings of the 14th ACM Great Lakes symposium on VLSI
  • Year:
  • 2004

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Abstract

We examine the performance of custom circuits in an emerging technology known as three-dimensional integration. By combining multiple device layers with a high-density inter-layer interconnect, 3D integration of a given circuit is expected to provide better timing and energy performance relative to a single-wafer implementation of the same circuit. In this paper, we show that by using our performance-driven design tool for 3D ICs, the interconnect energy dissipation of standard-cell circuits can be reduced by 24% to 42% using two to five device layers respectively. Similarly, the interconnect energy-delay product can be reduced by 30% to 50%.At the same time, thermal performance in 3D ICs is expected to be a critical issue. By incorporating thermal management and analysis into our placement tool, we may investigate the thermal scalability of 3D integration. We find that the thermal performance actually can be improved with the use of a modest number of additional device layers. Also, we show that the absolute die temperature can be controlled through the use of extra silicon.