FREE-p: Protecting non-volatile memory against both hard and soft errors

  • Authors:
  • Doe Hyun Yoon;Naveen Muralimanohar;Jichuan Chang;Parthasarathy Ranganathan;Norman P. Jouppi;Mattan Erez

  • Affiliations:
  • The University of Texas at Austin, Electrical and Computer Engineering Dept;Hewlett-Packard Labs, Intelligent Infrastructure Lab;Hewlett-Packard Labs, Intelligent Infrastructure Lab;Hewlett-Packard Labs, Intelligent Infrastructure Lab;Hewlett-Packard Labs, Intelligent Infrastructure Lab;The University of Texas at Austin, Electrical and Computer Engineering Dept

  • Venue:
  • HPCA '11 Proceedings of the 2011 IEEE 17th International Symposium on High Performance Computer Architecture
  • Year:
  • 2011

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Abstract

Emerging non-volatile memories such as phase-change RAM (PCRAM) offer significant advantages but suffer from write endurance problems. However, prior solutions are oblivious to soft errors (recently raised as a potential issue even for PCRAM) and are incompatible with high-level fault tolerance techniques such as chipkill. To additionally address such failures requires unnecessarily high costs for techniques that focus singularly on wear-out tolerance. In this paper, we propose fine-grained remapping with ECC and embedded pointers (FREE-p). FREE-p remaps fine-grained worn-out NVRAM blocks without requiring large dedicated storage. We discuss how FREE-p protects against both hard and soft errors and can be extended to chipkill. Further, FREE-p can be implemented purely in the memory controller, avoiding custom NVRAM devices. In addition to these benefits, FREE-p increases NVRAM lifetime by up to 26% over the state-of-the-art even with severe process variation while performance degradation is less than 2% for the initial 7 years.