Point and discard: a hard-error-tolerant architecture for non-volatile last level caches

  • Authors:
  • Jue Wang;Xiangyu Dong;Yuan Xie

  • Affiliations:
  • Pennsylvania State University;Pennsylvania State University;Pennsylvania State University

  • Venue:
  • Proceedings of the 49th Annual Design Automation Conference
  • Year:
  • 2012

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Abstract

Technology scaling of SRAM and embedded DRAM is increasingly constrained by limitations such as leakage power and silicon area. Emerging non-volatile memory technologies are considered as the potential SRAM/eDRAM alternatives for last-level caches in terms of energy and area savings. Unfortunately, these non-volatile memory technologies usually have limited write endurance. Even worse, process variation causes some cells to wear out much earlier than others. While state-of-the-art error-tolerant techniques such as ECC can handle transient soft errors, we need a new architecture for non-volatile last-level caches whose reliability is mainly challenged by hard errors. This paper presents Point-and-Discard (PAD), a hard-failure-tolerant architecture for non-volatile caches. PAD has no initial performance penalty and ensures gradual performance overhead with small storage overhead. By adopting PAD, the lifetime of non-volatile caches can be improved by 4.6X over the conventional architecture under a typical process variation condition.