Improving dual Vt technology by simultaneous gate sizing and mechanical stress optimization

Authors:
Junjun Gu;Gang Qu;Lin Yuan;Cheng Zhuo
Affiliations:
University of Maryland, College Park, MD;University of Maryland, College Park, MD;Synopsys Inc., Mountain View, CA;University of Michigan, Ann Arbor, MI
Venue:
Proceedings of the International Conference on Computer-Aided Design
Year:
2011

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Abstract

Process-induced mechanical stress is used to enhance carrier mobility and drive current in contemporary CMOS technologies. Stressed cells have reduced delay but larger leakage consumption. Its efficient power/delay trading ratio makes mechanical stress an enticing alternative to other power optimization techniques. This paper proposes an effective urgentpath guided approach that improves dual Vt technique by incorporating gate sizing and mechanical stress simultaneously. The introduction of mechanical stress is shown to achieve 9.8% leakage and 2.8% total power savings over combined gate sizing and dual Vt approach.