Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Modeling and minimization of PMOS NBTI effect for robust nanometer design
Proceedings of the 43rd annual Design Automation Conference
An analytical model for negative bias temperature instability
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Oxygen vacancies in high-k oxides
Microelectronic Engineering
Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design
The impact of random device variation on SRAM cell stability in sub-90-nm CMOS technologies
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
Proceedings of the 2009 International Conference on Computer-Aided Design
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This paper, for the first time, shows that the work-function variation (WFV) in emerging metal-gate devices results in significant fluctuation in the gate-oxide electric field, and hence fluctuation in bias temperature instability (BTI) characteristics (both NBTI and PBTI). We modify the existing NBTI and PBTI models in order to accurately characterize the BTI characteristics of the metal-gate devices. It is shown that the impact of the oxide electric field on threshold voltage degradation is substantially underestimated if WFV is neglected. Moreover, in FinFET devices, work-function variation induced electric field (which is independent of the gate-source bias) not only results in fluctuation in the BTI characteristics, but also causes variation in the recovery process. It is highlighted for the first time that WFV induced BTI fluctuation can have significant impact on the performance and reliability characteristics of digital circuits such as SRAM cells and Domino logic gates.