A log buffer-based flash translation layer using fully-associative sector translation
ACM Transactions on Embedded Computing Systems (TECS)
LAST: locality-aware sector translation for NAND flash memory-based storage systems
ACM SIGOPS Operating Systems Review
KAST: K-Associative Sector Translation for NAND flash memory in real-time systems
Proceedings of the Conference on Design, Automation and Test in Europe
ComboFTL: Improving performance and lifespan of MLC flash memory using SLC flash buffer
Journal of Systems Architecture: the EUROMICRO Journal
A Hybrid Approach to NAND-Flash-Based Solid-State Disks
IEEE Transactions on Computers
A hybrid flash translation layer design for SLC-MLC flash memory based multibank solid state disk
Microprocessors & Microsystems
ROSE: A Novel Flash Translation Layer for NAND Flash Memory Based on Hybrid Address Translation
IEEE Transactions on Computers
The bleak future of NAND flash memory
FAST'12 Proceedings of the 10th USENIX conference on File and Storage Technologies
Software controlled cell bit-density to improve NAND flash lifetime
Proceedings of the 49th Annual Design Automation Conference
A space-efficient flash translation layer for CompactFlash systems
IEEE Transactions on Consumer Electronics
Extending the lifetime of NAND flash memory by salvaging bad blocks
DATE '12 Proceedings of the Conference on Design, Automation and Test in Europe
Wear unleveling: improving NAND flash lifetime by balancing page endurance
FAST'14 Proceedings of the 12th USENIX conference on File and Storage Technologies
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On a Multi-Level Cell (MLC) flash memory, a flash block that is becoming unreliable to store multiple bits per cell can be "revived" by storing only a single bit per cell. While the revived-block capacity is halved, its lifetime is significantly extended without jeopardizing the stored data. We present Phœnix, a technique that benefits from this feature to extend a device lifetime, and we evaluate its potential through detailed trace simulation on realistic benchmarks. Phœnix shows systematic lifetime extensions ranging from 3% up to 17%, without extra memory requirements or performance loss.