Layout decomposition for double patterning lithography
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
Double patterning technology friendly detailed routing
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
GREMA: graph reduction based efficient mask assignment for double patterning technology
Proceedings of the 2009 International Conference on Computer-Aided Design
A matching based decomposer for double patterning lithography
Proceedings of the 19th international symposium on Physical design
Double patterning layout decomposition for simultaneous conflict and stitch minimization
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Double patterning lithography aware gridless detailed routing with innovative conflict graph
Proceedings of the 47th Design Automation Conference
Enhancing double-patterning detailed routing with lazy coloring and within-path conflict avoidance
Proceedings of the Conference on Design, Automation and Test in Europe
Proceedings of the 2010 Asia and South Pacific Design Automation Conference
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Double patterning lithography (DPL) is seen as one of the most promising solutions for new technology nodes such as 32nm and 22nm. However, DPL faces the challenges of handling layout decomposition and overlay errors. Currently, most DPL solutions use post-layout decomposition which requires multiple iterations and designer intervention to achieve a decomposable layout as designs scale larger. Recent research is starting to consider DPL constraints during the layout design phase especially during the detailed routing phase. In this work, we propose DPL-aware grid-based detailed routing algorithm supported with online conflict resolution. The conflict resolution algorithm uses a graph structure to represent geometrical relations between routed polygons and helps in conflict detection and color assignment. Experimental results indicate that this enhanced algorithm reduces the number of conflicts by 60% on average.