New graph bipartizations for double-exposure, bright field alternating phase-shift mask layout
Proceedings of the 2001 Asia and South Pacific Design Automation Conference
A cost-driven lithographic correction methodology based on off-the-shelf sizing tools
Proceedings of the 40th annual Design Automation Conference
Toward a methodology for manufacturability-driven design rule exploration
Proceedings of the 41st annual Design Automation Conference
Manufacturing-Aware Physical Design
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
Physical CAD changes to incorporate design for lithography and manufacturability
Proceedings of the 2004 Asia and South Pacific Design Automation Conference
Performance Driven OPC for Mask Cost Reduction
ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
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In this paper, we describe new types of layout design constraints needed to effectively leverage advanced optical wafter lithography techniques. Most of these constraints are dictated by the physics of advanced lithography processes, while other constraints are imposed by new photomask techniques. Among the methods discussed are 1) phase shift mask (PSM) lithography in which phase information is placed to the photomask in combination with conventional clear and dar information; 2) optical proximity correction (OPC) where predictable distorations in feature geometry are corrected by putting an inverse distortion on the mask; 3) off-axis illumination optics that improve resolution of some configurations at the expense of others; and 4) use of non-resolving assist features that improve neighboring structures.