RTL Power Optimization with Gate-Level Accuracy

  • Authors:
  • Qi Wang;Sumit Roy

  • Affiliations:
  • Cadence Design Systems, Inc, San Jose;Calypto Design Systems, Inc, Santa Clara

  • Venue:
  • Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
  • Year:
  • 2003

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Abstract

Traditional RTL power optimization techniques committransformations at the RTL based on the estimation of area, delayand power. However, because of inadequate power and delayinformation, the power optimization transformations applied atthe RTL may cause unexpected results after synthesis, such asworsened delay or increased power dissipation. Our solution tothis problem is to divide RTL power optimization into two steps,namely RTL exploration and gate-level commitment. During RTLexploration phase potential candidates for applying some specificRTL transformation are identified where high level informationpermits faster and more effective analysis. These candidates aresimply "marked" on the netlist. Then during the gate-levelcommitment phase when accurate power and delay information isavailable, the final decision of whether accepting or rejecting thecandidate is made to achieve the best power and delay trade-offs.