A new boundary element method for accurate modeling of lossy substrates with arbitrary doping profiles

  • Authors:
  • Xiren Wang;Wenjian Yu;Zeyi Wang

  • Affiliations:
  • Tsinghua Univ., Beijing, China;Tsinghua Univ., Beijing, China;Tsinghua Univ., Beijing, China

  • Venue:
  • ASP-DAC '06 Proceedings of the 2006 Asia and South Pacific Design Automation Conference
  • Year:
  • 2006

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Abstract

It is important to model substrate couplings for SoC/mixed-signal circuit designs. After introducing the continuation equation of full current in lossy substrates, we present a new direct boundary element method (DBEM), which can handle the substrates with arbitrary doping profiles. Three techniques can speed up the DBEM remarkably, which include reusing coefficient matrices for multiple-frequency calculation, condensing the linear system, and sparsifying coefficient matrix. Numerical experiments illustrate that DBEM has high accuracy and high efficiency, and is versatile for arbitrary doping profiles.