Filling and slotting: analysis and algorithms
ISPD '98 Proceedings of the 1998 international symposium on Physical design
Performance-impact limited area fill synthesis
Proceedings of the 40th annual Design Automation Conference
ISQED '03 Proceedings of the 4th International Symposium on Quality Electronic Design
On legalization of row-based placements
Proceedings of the 14th ACM Great Lakes symposium on VLSI
Dummy Filling Methods for Reducing Interconnect Capacitance and Number of Fills
ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
Proceedings of the 18th ACM Great Lakes symposium on VLSI
Metal filling impact on standard cells: definition of the metal fill corner concept
Proceedings of the 21st annual symposium on Integrated circuits and system design
Simple and accurate models for capacitance considering floating metal fill insertion
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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It is well known that fill insertion adversely affects total and coupling capacitance of interconnects. While grounded fill can be extracted by full-chip extractors, floating fill can be reliably extracted by 3D field solvers only. Due to poor understanding of the impact of floating fill on capacitance, designers insert floating fill conservatively. In this paper we study the impact of floating fill insertion on coupling and total capacitance when the fill geometry, and both the interconnects between which the capacitance is measured are on the same layer. We show that the capacitance with same-layer neighboring interconnects is a large fraction of total capacitance, and that it is significantly affected by fill geometries on the same layer. We analyze the effect of fill configuration parameters such as fill size, fill location, interconnect width, interconnect spacing, etc. and consider edge effects and effects occurring due to insertion of several fill geometries in close proximity. Based on our findings, we propose certain guidelines to achieve high metal density while having smaller impact on interconnect capacitance. Finally, we validate the proposed guidelines using representative process parameters and a 3D field solver. On average coupling capacitance increase due to floating-fill insertion decreases by ~ 53% on using the proposed guidelines.