Crosstalk-induced delay, noise, and interconnect planarization implications of fill metal in nanoscale process technology

  • Authors:
  • Arthur Nieuwoudt;Jamil Kawa;Yehia Massoud

  • Affiliations:
  • Synopsys, Inc., Mountain View, CA and Rice University, Houston, TX;Synopsys, Inc., Mountain View, CA;Rice University, Houston, TX

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2010

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Abstract

In this paper, we investigate the crosstalk-induced delay, noise, and chemical mechanical polishing (CMP)-induced thickness-variation implications of dummy fill generated using rule-based wire track fill techniques and CMP-aware model-based methods for designs implemented in 65 nm process technology. The results indicate that fill generated using rule-based and CMP-aware model-based methods can have a significant impact on parasitic capacitance, interconnect planarization, and individual path delay variation. Crosstalk-induced delay and noise are significantly reduced in the grounded-fill cases, and designs with floating fill also experience a reduction in average crosstalk-induced delay and noise, which is in contrast to the predictions of previous studies on small-scale interconnect structures. When crosstalk effects are included in the analysis, the observed delay behavior is significantly different from the delay modeled without considering crosstalk effects. Consequently, crosstalk-induced delay and noise must be simultaneously considered in addition to parasitic capacitance and interconnect planarization when developing future fill generation methods