Low-Power Design Using Multiple Channel Lengths and Oxide Thicknesses

  • Authors:
  • Naran Sirisantana;Kaushik Roy

  • Affiliations:
  • Intel;Purdue University

  • Venue:
  • IEEE Design & Test
  • Year:
  • 2004

Quantified Score

Hi-index 0.00

Visualization

Abstract

Two CMOS design techniques use dual threshold voltages to reduce power consumption while maintaining high performance. Simulation results show power savings of 21% for one technique at low activity, and for the other, 19% at high activity and 38% at low activity.