Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Circuit-level techniques to control gate leakage for sub-100nm CMOS
Proceedings of the 2002 international symposium on Low power electronics and design
Analysis and minimization techniques for total leakage considering gate oxide leakage
Proceedings of the 40th annual Design Automation Conference
High-Performance Low-Power CMOS Circuits Using Multiple Channel Length and Multiple Oxide Thickness
ICCD '00 Proceedings of the 2000 IEEE International Conference on Computer Design: VLSI in Computers & Processors
Gate oxide leakage current analysis and reduction for VLSI circuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Tradeoffs between date oxide leakage and delay for dual Tox circuits
Proceedings of the 41st annual Design Automation Conference
Modeling and Reduction of Gate Leakage during Behavioral Synthesis of NanoCMOS Circuits
VLSID '06 Proceedings of the 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design
Low-Power Design Using Multiple Channel Lengths and Oxide Thicknesses
IEEE Design & Test
CMOS design near the limit of scaling
IBM Journal of Research and Development
DC and AC characteristics of sub-50-nm MOSFETs with source/drain-to-gate nonoverlapped structure
IEEE Transactions on Nanotechnology
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In this paper, novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time. The gate leakage behavior of novel MOSFET structure has been investigated with help of compact analytical model and Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended source/drain region. It is found that optimal source/drain-to-gate non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and drain induced barrier lowering characteristic with a slight degradation in source/drain series resistance and effective gate capacitance.