Transistor sizing issues and tool for multi-threshold CMOS technology
DAC '97 Proceedings of the 34th annual Design Automation Conference
Duet: an accurate leakage estimation and optimization tool for dual-Vt circuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Design of High-Performance Microprocessor Circuits
Design of High-Performance Microprocessor Circuits
Circuit-level techniques to control gate leakage for sub-100nm CMOS
Proceedings of the 2002 international symposium on Low power electronics and design
Analysis and minimization techniques for total leakage considering gate oxide leakage
Proceedings of the 40th annual Design Automation Conference
Static leakage reduction through simultaneous threshold voltage and state assignment
Proceedings of the 40th annual Design Automation Conference
High-Performance Low-Power CMOS Circuits Using Multiple Channel Length and Multiple Oxide Thickness
ICCD '00 Proceedings of the 2000 IEEE International Conference on Computer Design: VLSI in Computers & Processors
CMOS design near the limit of scaling
IBM Journal of Research and Development
Power-Performance Trade-Offs in Nanometer-Scale Multi-Level Caches Considering Total Leakage
Proceedings of the conference on Design, Automation and Test in Europe - Volume 1
Total leakage optimization strategies for multi-level caches
GLSVLSI '05 Proceedings of the 15th ACM Great Lakes symposium on VLSI
Full-chip analysis of leakage power under process variations, including spatial correlations
Proceedings of the 42nd annual Design Automation Conference
ISVLSI '05 Proceedings of the IEEE Computer Society Annual Symposium on VLSI: New Frontiers in VLSI Design
A Dual Dielectric Approach for Performance Aware Gate Tunneling Reduction in Combinational Circuits
ICCD '05 Proceedings of the 2005 International Conference on Computer Design
Integrated retiming and simultaneous Vdd/Vth scaling for total power minimization
Proceedings of the 2006 international symposium on Physical design
Dual-K Versus Dual-T Technique for Gate Leakage Reduction: A Comparative Perspective
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
An evaluation of the impact of gate oxide tunneling on dual-Vt-based leakage reduction techniques
GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
Proceedings of the conference on Design, automation and test in Europe: Proceedings
Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits
Proceedings of the conference on Design, automation and test in Europe: Proceedings
Prediction of leakage power under process uncertainties
ACM Transactions on Design Automation of Electronic Systems (TODAES)
ACM Transactions on Design Automation of Electronic Systems (TODAES)
Recovery-driven design: a power minimization methodology for error-tolerant processor modules
Proceedings of the 47th Design Automation Conference
Gate oxide leakage and delay tradeoffs for dual-toxcircuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Towards robust nano-CMOS sense amplifier design: a dual-threshold versus dual-oxide perspective
Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structure
Journal of Computational Electronics
Variability-aware architecture level optimization techniques for robust nanoscale chip design
Computers and Electrical Engineering
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Gate oxide tunneling current (Igate) will become the dominant component of leakage in CMOS circuits as the physical oxide thickness (Tox) goes below 15AA. Increasing the value of Tox reduces the leakage at the expense of an increase in delay, and a practical tradeoff between delay and leakage can be achieved by assigning one of the two permissible Tox values to each transistor. In this paper, we propose an algorithm for dual Tox assignment to optimize the total leakage power under delay constraints, and generate a leakage/delay tradeoff curve. As compared to the case where all transistors are set to low Tox, our approach achieves an average leakage reduction of 83% under 100nm models.