DRAM-based FPGA enabled by three-dimensional (3d) memory stacking (abstract only)

  • Authors:
  • Yangyang Pan;Tong Zhang

  • Affiliations:
  • Rensselaer Polytechnic Institute, Troy, NY, USA;Rensselaer Polytechnic Institute, Troy, NY, USA

  • Venue:
  • Proceedings of the 18th annual ACM/SIGDA international symposium on Field programmable gate arrays
  • Year:
  • 2010

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Abstract

Motivated by the emerging three-dimensional (3D integration technologies, this paper studies the potential of applying 3D memory stacking to enable FPGA devices use on-chip DRAM cells to store configuration data. In current design practice, FPGAs do not use on-chip DRAM cells for configuration data storage mainly because on-chip DRAM self-refreshing involves destructive DRAM read operations. This problem can be solved if we use a 3D stacked memory as primary FPGA configuration data storage and externally refresh on-chip DRAM cells. Since the 3D stacked memory can easily store multiple sets of configuration data, it can meanwhile enable high-speed FPGA dynamic reconfiguration. In this paper, we study such DRAM-based FPGA design enabled by 3D memory stacking and investigate potential design issues, and employ the VPR tool set to demonstrate that DRAM-based FPGAs can noticeably reduce FPGA die area and hence improve speed and energy consumption performance, compared their SRAM-based counterparts.