Statistical SRAM analysis for yield enhancement

  • Authors:
  • Paul Zuber;Miguel Miranda;Petr Dobrovolný;Koen van der Zanden;Jong-Hoon Jung

  • Affiliations:
  • Digital Components, IMEC-Belgium;Digital Components, IMEC-Belgium;Digital Components, IMEC-Belgium;Digital Components, IMEC-Belgium;Samsung Electronics Co., Korea

  • Venue:
  • Proceedings of the Conference on Design, Automation and Test in Europe
  • Year:
  • 2010

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Abstract

This paper presents an automated technique to perform SRAM wide statistical analysis in presence of process variability. The technique is implemented in a prototype tool and is demonstrated on several 45 and 32nm industry-grade SRAM vehicles. Selected case studies show how this approach successfully captures non-trivial statistical interactions between the cells and the periphery, which remain uncovered when only using statistical electrical simulations of the critical path or applying a digital corner approach. The presented tool provides the designer with valuable information on what performance metrics to expect, if manufactured. Since this feedback takes place in the design phase, a significant reduction in development time and cost can be achieved.