A process variation compensating technique with an on-die leakage current sensor for nanometer scale dynamic circuits

  • Authors:
  • Chris H. Kim;Kaushik Roy;Steven Hsu;Ram Krishnamurthy;Shekhar Borkar

  • Affiliations:
  • Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN;Department of Electrical and Computer Engineering, Purdue University, Lafayette, IN;Circuit Research, Intel Labs, Hillsboro, OR;Circuit Research, Intel Labs, Hillsboro, OR;Circuit Research, Intel Labs, Hillsboro, OR

  • Venue:
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems
  • Year:
  • 2006

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Abstract

This paper describes a process compensating dynamic (PCD) circuit technique for maintaining the performance benefit of dynamic circuits and reducing the variation in delay and robustness. A variable strength keeper that is optimally programmed based on the die leakage, enables 10% faster performance, 35% reduction in delay variation, and 5× reduction in the number of robustness failing dies, compared to conventional designs. A new leakage current sensor design is also presented that can detect leakage variation and generate the keeper control signals for the PCD technique. Results based on measured leakage data show 1.9-10.2× higher signal-to-noise ratio (SNR) and reduced sensitivity to supply and p-n skew variations compared to prior leakage sensor designs.