Impact of NBTI on SRAM Read Stability and Design for Reliability
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Circuit Failure Prediction and Its Application to Transistor Aging
VTS '07 Proceedings of the 25th IEEE VLSI Test Symmposium
NBTI resilient circuits using adaptive body biasing
Proceedings of the 18th ACM Great Lakes symposium on VLSI
NBTI-aware sleep transistor design for reliable power-gating
Proceedings of the 19th ACM Great Lakes symposium on VLSI
NBTI aware workload balancing in multi-core systems
ISQED '09 Proceedings of the 2009 10th International Symposium on Quality of Electronic Design
A multi-level approach to reduce the impact of NBTI on processor functional units
Proceedings of the 20th symposium on Great lakes symposium on VLSI
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
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Negative Bias Temperature Instability (NBTI) causes the threshold voltage of PMOS devices to degrade with time, resulting in a reduced lifetime of a CMOS IC. In this paper, we present an approach to mitigate the degradation due to NBTI for off-chip output drivers. Our approach is based on forcibly inducing relaxation in the individual fingers of the output driver (which is typically implemented in a multi-fingered fashion). The individual fingers are relaxed in a round-robin manner, such that at any given time, k out of n fingers of the driver are being relaxed. Our results show that the proposed approach significantly extends the lifetime of the output driver.