Impact of NBTI on SRAM Read Stability and Design for Reliability
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Modeling and minimization of PMOS NBTI effect for robust nanometer design
Proceedings of the 43rd annual Design Automation Conference
Reliability modeling and management in dynamic microprocessor-based systems
Proceedings of the 43rd annual Design Automation Conference
The impact of NBTI on the performance of combinational and sequential circuits
Proceedings of the 44th annual Design Automation Conference
An on-chip NBTI sensor for measuring PMOS threshold voltage degradation
ISLPED '07 Proceedings of the 2007 international symposium on Low power electronics and design
ISQED '08 Proceedings of the 9th international symposium on Quality Electronic Design
Hierarchically focused guardbanding: an adaptive approach to mitigate PVT variations and aging
Proceedings of the Conference on Design, Automation and Test in Europe
Workload and user experience-aware dynamic reliability management in multicore processors
Proceedings of the 50th Annual Design Automation Conference
ARGO: aging-aware GPGPU register file allocation
Proceedings of the Ninth IEEE/ACM/IFIP International Conference on Hardware/Software Codesign and System Synthesis
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We designed two compact in situ NBTI and oxide degradation sensors with digital outputs in 130 nm CMOS. The 308 µm2 NBTI sensor and the 150 µm2 oxide degradation sensor provide digital frequency outputs and are compatible with a cell-based design methodology without requiring analog supplies. The sensors enable high-volume data collection and monitoring of degradation mechanisms to guide dynamic control schemes and warn of impending device failure. Large scale data-collection permits improved modeling and the potential for insight into the underlying reliability mechanisms. The oxide degradation sensor monitors the change in gate leakage under stress conditions and is the first proposed of its kind. The NBTI sensor is 110× smaller than previous work and is designed to compensate for temperature variations during measurement. A maximum error of 2.2% is observed for the NBTI sensor under process, voltage, and temperature variations. It provides ΔVth measurement with 3σ accuracy of 1.23 mV from 40°C-110°C.