Self-aligned double patterning aware pin access and standard cell layout co-optimization

  • Authors:
  • Xiaoqing Xu;Brian Cline;Greg Yeric;Bei Yu;David Z. Pan

  • Affiliations:
  • University of Texas at Austin, Austin, TX, USA;ARM Inc, Austin, TX, USA;ARM Inc, Austin, TX, USA;University of Texas at Austin, Austin, TX, USA;University of Texas at Austin, Austin, TX, USA

  • Venue:
  • Proceedings of the 2014 on International symposium on physical design
  • Year:
  • 2014

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Abstract

Self-Aligned Double Patterning (SADP) is being considered for use at the 10$nm$ technology node and below for routing layers with pitches down to ~50nm because it has better LER and overlay control compared to other multiple patterning candidates. To date, most of the SADP-related literature has focused on enabling SADP-legal routing in physical design tools while few attempts have been made to address the impact SADP routing has on local, standard cell (SC) I/O pin access. In this paper, we present the first study on SADP-aware pin access and layout optimization at the SC level. Accounting for SADP-specific design rules, we propose a coherent framework that uses Mixed Integer Linear Programming (MILP) and branch and bound method to simultaneously optimize SADP-based local pin access and within-cell connections. Our experimental results show that, compared with the conventional approach, our framework effectively improves pin access of the standard cells and maximizes the pin access flexibility for routing.