Impact of using adaptive body bias to compensate die-to-die Vt variation on within-die Vt variation
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Subthreshold leakage modeling and reduction techniques
Proceedings of the 2002 IEEE/ACM international conference on Computer-aided design
IEEE Transactions on Very Large Scale Integration (VLSI) Systems - Special section on low power
Proceedings of the conference on Design, automation and test in Europe - Volume 1
Challenges and design choices in nanoscale CMOS
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Battery discharge aware energy feasibility analysis
CODES+ISSS '06 Proceedings of the 4th international conference on Hardware/software codesign and system synthesis
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Invited paper: Variability in nanometer CMOS: Impact, analysis, and minimization
Integration, the VLSI Journal
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In a speed-adaptive threshold-voltage CMOS (SA-Vt CMOS) circuit, the substrate bias is controlled so that delay in the circuit stays constant. Distributions of device speeds are squeezed under fast-operation conditions. With a ring oscillator using 0.25-µm CMOS devices as a test circuit, we found that the worst-case operating frequency was improved from 20 MHz to 55 MHz, and the fluctuation of the operating frequency was suppressed from 44 % to 15 % while the supply-voltage variation was under 0.1 V with a 1.8 V supply voltage.