Larger-than-vdd forward body bias in sub-0.5V nanoscale CMOS

Authors:
Hari Ananthan;Chris H. Kim;Kaushik Roy
Affiliations:
Purdue University, West Lafayette, IN;Purdue University, West Lafayette, IN;Purdue University, West Lafayette, IN
Venue:
Proceedings of the 2004 international symposium on Low power electronics and design
Year:
2004

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Abstract

This paper examines the effectiveness of larger-than-Vdd forward body bias (FBB) in nanoscale bulk CMOS circuits where Vdd is expected to scale below 0.5V. Equal-to and larger-than Vdd FBB schemes offer unique advantages over conventional FBB such as simple design overhead and reverse body bias capability respectively. Compared to zero body bias, they improve process-variation immunity and achieve 71% and 78% standby leakage savings at iso performance and iso active power at room temperature. We also suggest a novel temperature-adaptive body bias scheme to control active leakage and achieve 22% and 40% active power savings at higher temperatures.