Testing semiconductor memories: theory and practice
Testing semiconductor memories: theory and practice
Survey of Low-Power Testing of VLSI Circuits
IEEE Design & Test
Integration of Non-Classical Faults in Standard March Tests
MTDT '98 Proceedings of the 1998 IEEE International Workshop on Memory Technology, Design and Testing
March iC-: An Improved Version of March C- for ADOFs Detection
VTS '04 Proceedings of the 22nd IEEE VLSI Test Symposium
Low Power Embedded DRAMs with High Quality Error Correcting Capabilities
ETS '05 Proceedings of the 10th IEEE European Symposium on Test
Data Retention Fault in SRAM Memories: Analysis and Detection Procedures
VTS '05 Proceedings of the 23rd IEEE Symposium on VLSI Test
Efficient March Test Procedure for Dynamic Read Destructive Fault Detection in SRAM Memories
Journal of Electronic Testing: Theory and Applications
LPRAM: a novel low-power high-performance RAM design with testability and scalability
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Efficient test solutions for core-based designs
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
System-on-Chip Test Architectures: Nanometer Design for Testability
System-on-Chip Test Architectures: Nanometer Design for Testability
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In this paper we analyze the test power of SRAM memories and demonstrate that the full functional pre-charge activity is not necessary during test mode because of the predictable addressing sequence. We exploit this observation in order to minimize power dissipation during test by eliminating the unnecessary power consumption associated with the pre-charge activity. This is achieved through a modified pre-charge control circuitry, exploiting the first degree of freedom of March tests, which allows choosing a specific addressing sequence. The efficiency of the proposed solution is validated through extensive Spice simulations.