Testing semiconductor memories: theory and practice
Testing semiconductor memories: theory and practice
Static and dynamic behavior of memory cell array opens and shorts in embedded DRAMs
Proceedings of the conference on Design, automation and test in Europe
Integration of Non-Classical Faults in Standard March Tests
MTDT '98 Proceedings of the 1998 IEEE International Workshop on Memory Technology, Design and Testing
Functional Memory Faults: A Formal Notation and a Taxonomy
VTS '00 Proceedings of the 18th IEEE VLSI Test Symposium
Testing Static and Dynamic Faults in Random Access Memories
VTS '02 Proceedings of the 20th IEEE VLSI Test Symposium
Importance of Dynamic Faults for New SRAM Technologies
ETW '03 Proceedings of the 8th IEEE European Test Workshop
Defect-Oriented Dynamic Fault Models for Embedded-SRAMs
ETW '03 Proceedings of the 8th IEEE European Test Workshop
Minimizing test power in SRAM through reduction of pre-charge activity
Proceedings of the conference on Design, automation and test in Europe: Proceedings
Analysis of resistive-open defects in SRAM sense amplifiers
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Reliability-enhancement and self-repair schemes for SRAMs with static and dynamic faults
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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This paper presents an analysis of dynamic faults in core-cell of SRAM memories. These faults may appear as the consequence of resistive-open defects that appear more and more frequently in VDSM technologies. In particular, the study concentrates on those defects that generate dynamic Read Destructive Faults, dRDFs. In this paper, we demonstrate that read or write operations on a cell involve a stress on the other cells of the same word line. This stress, called Read Equivalent Stress (RES), has the same effect than a read operation. On this basis, we propose to modify the well known March C-, which does not detect dRDFs, into a new version able to detect them. This is obtained by changing its addressing order with the purpose of producing the maximal number of RES. This modification does not change the complexity of the algorithm and its capability to detect the former target faults.