A Novel RF Test Scheme Based on a DFT Method

  • Authors:
  • Jee-Youl Ryu;Bruce C. Kim;Iboun Sylla

  • Affiliations:
  • Samsung SDI Co., Ltd., Seoul, South Korea;University of Alabama, Tuscaloosa, USA;Texas Instruments, Inc., Plano, USA

  • Venue:
  • Journal of Electronic Testing: Theory and Applications
  • Year:
  • 2006

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Abstract

This paper presents a new RF testing scheme based on a design-for-testability (DFT) method for measuring functional specifications of RF integrated circuits (IC). The proposed method provides the input impedance, gain, noise figure, voltage standing wave ratio (VSWR) and output signal-to-noise ratio (SNR) of a low noise amplifier (LNA). The RF test scheme is based on theoretical expressions that produce the actual RF device specifications by utilizing the output DC voltages from the DFT chip. This technique can save marginally failing chips in production testing as well as in the system, hence saving a tremendous amount of revenue from unnecessary device replacements.