Inductance 101: modeling and extraction
Proceedings of the 38th annual Design Automation Conference
Performance analysis of carbon nanotube interconnects for VLSI applications
ICCAD '05 Proceedings of the 2005 IEEE/ACM International conference on Computer-aided design
Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology
Analysis of on-chip inductance effects for distributed RLC interconnects
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
OIL: a nano-photonics optical interconnect library for a new photonic networks-on-chip architecture
Proceedings of the 11th international workshop on System level interconnect prediction
Evaluating carbon nanotube global interconnects for chip multiprocessor applications
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Proceedings of the International Conference & Workshop on Emerging Trends in Technology
Demystifying SWCNT-bundle-interconnects inductive behavior through novel modeling
Journal of Computational Electronics
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In this work, we have quantified and compared the performance of carbon nanotube (CNT) and optical interconnects with the existing technology of Cu/low-K interconnects for future high-performance ICs. We present these comparisons not only in terms of commonly used metrics such as latency and power dissipation, but also compare them using important compound performance metrics, such as, bandwidth density per latency per power. We find that the optical interconnect has the lowest latency for global interconnects and the highest achievable bandwidth density using wavelength division multiplexing. However, the value of the compound metric is the highest for either CNTs or optical technology depending on the required bandwidth density. Both these technologies significantly outperform the existing Cu/low-K interconnect technology. We have also extensively examined the impact of device, material, and system parameters of the novel interconnect technologies on the comparisons. We find that using small detector and modulator capacitances optical interconnects (~10fF) yield superior performance compared to CNTs (electron mean free path of 0.9mm) and Cu for switching activities greater than 35% and 20%, respectively. However, improving mean free path of CNTs to ~2.8μm increases the crossover switching activity to 80%.