Design and optimization of dual-threshold circuits for low-voltage low-power applications
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Impact of using adaptive body bias to compensate die-to-die Vt variation on within-die Vt variation
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Fast statistical timing analysis by probabilistic event propagation
Proceedings of the 38th annual Design Automation Conference
Proceedings of the 39th annual Design Automation Conference
Standby power optimization via transistor sizing and dual threshold voltage assignment
Proceedings of the 2002 IEEE/ACM international conference on Computer-aided design
Parameter variations and impact on circuits and microarchitecture
Proceedings of the 40th annual Design Automation Conference
Statistical optimization of leakage power considering process variations using dual-Vth and sizing
Proceedings of the 41st annual Design Automation Conference
New Generation of Predictive Technology Model for Sub-45nm Design Exploration
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
Design for Manufacturability and Yield for Nano-Scale CMOS
Design for Manufacturability and Yield for Nano-Scale CMOS
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Leakage current is susceptible to variation of transistor parameters and environment such as temperature, which results in wide spread in leakage distribution. The spread can be reduced by employing body biasing: reverse body bias for too leaky dies and forward body bias for too slow dies. We investigate body biasing of mixed Vt circuits. It is shown that the conventional body biasing has limitation in reducing leakage variation of mixed Vt circuits. This is because low- and high-Vt devices do not track each other and their body biasing sensitivities are different. We present alternative body biasing scheme that targets compensating die-to-die variation of low Vt. Under this body biasing scheme, within-die profiles of low- and high-Vt, which we need for statistical allocation of mixed Vt, get wider thus become different from the original ones. We present an analytical procedure to derive new within-die profiles. Experiments with 45-nm predictive model show that the spread in leakage distribution (ratio of maximum and minimum leakage) can be reduced to 4.5 as opposed to 9.4 from conventional body biasing on mixed Vt circuits.